Semiconductor devices

Abstract

The semiconductor device of the embodiment is a semiconductor device having a full-circuit gate transistor, comprising: a substrate; a channel structure including a plurality of channel layers deposited on the substrate in a stacking direction perpendicular to the substrate; a gate structure including a gate electrode disposed such that a gate insulating film is disposed around each of the plurality of channel layers; a source and drain structure disposed on the substrate, next to the plurality of channel layers of the channel structure, extending in the gate length direction; and in a cross-section along the stacking direction, the film thickness of each of the plurality of channel layers in the stacking direction is greater than the width of each of the plurality of channel layers in the gate width direction.

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