Semiconductor devices

TW202641080APending Publication Date: 2026-10-01SEMICON ENERGY LAB CO LTD
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Patent Information

Application Number
TW115121857
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2016-01-18
Filing Date
2016-05-20
Publication Date
2026-10-01

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Abstract

A metal oxide film including crystalline portions is provided. Furthermore, a metal oxide film with high physical property stability is provided. Additionally, a metal oxide film with improved electrical properties is provided. Furthermore, a metal oxide film that can improve field-effect mobility is provided. A metal oxide film comprising In, M (M being Al, Ga, Y, or Sn), and Zn is provided, the metal oxide film including a first crystalline portion and a second crystalline portion, the first crystalline portion having c-axis alignment, the second crystalline portion not having c-axis alignment, and the presence proportion of the second crystalline portion being higher than that of the first crystalline portion.
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