Semiconductor structure and manufacturing method of semiconductor structure

Abstract

A semiconductor structure and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes a substrate, an epitaxy layer over the substrate, a first lightly doped layer over the epitaxy layer, a second lightly doped layer over the epitaxy layer, a metal silicide layer over the second lightly dopes layer, a gate structure, a heavily doped layer, and a metal layer. The gate structure extends toward the substrate from a top surface of the metal silicide layer into the epitaxy layer. The heavily doped layer is disposed over the first lightly doped layer and surrounded by the second lightly doped layer. The metal covers a top surface of the metal silicide layer. The metal silicide layer covers and contacts a top surface of the second lightly doped layer and a top surface of the heavily doped layer. A doping concentration of the second lightly doped layer at an interface between the second lightly doped layer and the metal silicide layer is less than a doping concentration of the heavily doped layer and greater than a doping concentration of the first lightly doped layer.

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