Contact strap extending to common source / drain region of adjacent gate structures

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a contact strap extending to a common source / drain region of adjacent gate structures and methods of manufacture. The structure includes: a first gate structure; a second gate structure adjacent to the first gate structure; a common diffusion region to the first gate structure and the second gate structure; a trench lined with insulator material; and a contact strap extending within the trench and connecting to the common diffusion region.

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