Image sensors with pixel layouts having multi-gate transfer structures

Abstract

Image sensors with pixel layouts having multi-gate transfer structures are disclosed herein. In one embodiment, a pixel arrangement includes a transfer center gate (TCG) transistor, a plurality of pixels, a floating diffusion, and a source follower transistor. The plurality of pixels can be arranged to surround the TCG transistor. Each pixel of the plurality of pixels can include a photosensor and a transfer transistor having a transfer gate positioned between the photosensor and the TCG transistor. The floating diffusion can be disposed at a location proximate the source follower transistor. The floating diffusion can be coupled to the source follower transistor via a metal interconnect having a length corresponding to a minimum design rule. The pixel arrangement can lack junctions positioned between (a) the TCG transistor and (b) one or more of the transfer transistors.

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