Methods and devices for increasing efficiency of image sensor

TW202641117APending Publication Date: 2026-10-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114118424
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-21
Filing Date
2025-05-16
Publication Date
2026-10-01

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Abstract

The absorption efficiency of an image sensor is improved by forming a light reflective layer underneath a photodiode. A trench is formed at least partially located to one side of a gate structure. The trench is lined with a high-k adhesive layer, and then filled with a metal to form a light reflector. The trench is then sealed with a barrier layer. The light reflector increases reflectivity towards the photodiode, increasing the quantum efficiency.
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