Image sensor having a conductive material layer

TW202641121APending Publication Date: 2026-10-01SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
TW115107918
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-19
Filing Date
2026-03-04
Publication Date
2026-10-01

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Abstract

An image sensor includes a substrate including pixel regions each including a photodiode; a floating diffusion region disposed in each of the pixel regions on one surface of the substrate and configured to store electric charge transferred from the photodiode; circuit elements configured to transmit a photoelectric signal according to the electric charge of the floating diffusion region; and a first interlayer insulating layer covering the floating diffusion region on the one surface of the substrate, wherein at least one of the circuit elements includes a conductive material layer disposed on the first interlayer insulating layer and including a source region and a drain region; and a gate electrode disposed between the source region and the drain region on the conductive material layer, and wherein the source region is connected to one pixel region among the pixel regions, and the drain region is connected to another pixel region.
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