Semiconductor device

TW202641135APending Publication Date: 2026-10-01ENNOSTAR CORP
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Patent Information

Application Number
TW114110642
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-03-21
Publication Date
2026-10-01

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Abstract

The contact structure is located on the first region of the first semiconductor layer and includes a plurality of metal layers. The metal layers include a top metal layer containing metal oxide. The electrode structure is located on the contact structure.
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