Process for preparing a thin layer made of piezoelectric material by ion etching

Abstract

The present invention relates to a method for preparing a single-domain thin layer (4) of a piezoelectric material, the method comprising finishing a first layer (8) transferred onto a support (2). The finishing process includes heat-treating the free surface (9) of the first layer, followed by thinning to form the single-domain thin layer (4). According to the invention, the thinning of the first layer (8) comprises reactive ion etching using a plasma prepared from a mixture of a rare gas and a chlorine gas. The invention relates to a process for preparing a single-domain thin layer (4) made of piezoelectric material, comprising the finishing of a first layer (8) transferred onto a support (2). The finishing comprises heat treatment of the free face (9) of the first layer, followed by its thinning to form the single-domain thin layer (4).

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