Semiconductor device and method for fabricating the same

TW202641169APending Publication Date: 2026-10-01UNITED MICROELECTRONICS CORP
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Patent Information

Application Number
TW114109830
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-03-17
Publication Date
2026-10-01

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Abstract

A method for fabricating a resistive random access memory (RRAM) includes the steps of first providing a substrate having an alignment mark region and a RRAM region, forming an interlayer dielectric (ILD) layer on the substrate, forming a contact plug in the ILD layer of the RRAM region, forming a first bottom electrode (BE) layer on the RRAM region and the alignment mark region, and then removing the first BE layer and the ILD layer on the alignment mark region to form a trench.
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