Process for the manufacture of a pseudo-donor substrate comprising a plurality of tiles made of single-crystal gallium nitride

TW202641174APending Publication Date: 2026-10-01SOITEC SA
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Patent Information

Application Number
TW115108901
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-13
Filing Date
2026-03-11
Publication Date
2026-10-01

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Abstract

The invention relates to a process for the manufacture of a substrate, referred to as pseudo-donor substrate, comprising a plurality of tiles made of single-crystal gallium nitride (GaN) arranged next to one another on a support substrate, comprising: - the formation of a bonding layer
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