Manufacturing method of semiconductor device, semiconductor structure and manufacturing method thereof

Abstract

A method includes forming at least one semiconductor component in a semiconductor device component region over a substrate. An interconnect structure including at least one contact disposed in an insulating layer is formed over the semiconductor device component region. A conductive layer is formed over the interconnect structure. The conductive layer is annealed. The annealed conductive layer is etched to form a trench in the conductive layer. A remaining portion of the conductive layer overlaps the contact in the interconnect structure. A dielectric layer is formed in the trench.

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