Semiconductor device manufacturing method

Abstract

According to one embodiment, a method for manufacturing a semiconductor device includes the steps of forming a conductive layer comprising a metal element and oxygen, and forming a first film on the conductive layer. The method further includes the steps of forming a recess within the first film, and forming a second film within the recess. The method further includes the steps of processing the second film within the recess using a first gas comprising Cl (chlorine) to expose the surface of the conductive layer within the recess. The method further includes the steps of oxidizing the surface of the conductive layer exposed within the recess, and forming a semiconductor layer within the recess that contacts the oxidized surface of the conductive layer.

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