Metal-containing material etch methods

Abstract

Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A metal-containing material may be disposed on a substrate housed within the processing region. The oxygen-containing precursor may be provided from a gas box of the semiconductor processing chamber, through a showerhead defining an upper surface of the processing region, and into the processing region without passing an intervening gas flow component. The methods may include contacting the substrate with the oxygen-containing precursor to oxidize a portion of the metal-containing material to form a metal-and-oxygen-containing material. The methods may include providing a halogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the halogen-containing precursor to etch the metal-and-oxygen-containing material.

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