Method for forming high modulus and hardness carbon films with low pressure and low power pecvd

TW202641187APending Publication Date: 2026-10-01APPLIED MATERIALS INC
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Patent Information

Application Number
TW114147723
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-05
Filing Date
2025-12-05
Publication Date
2026-10-01

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Abstract

A method for processing a substrate is provided. The method includes flowing a precursor gas comprising a hydrocarbon compound into a process volume of a process chamber having a substrate positioned on a substrate support. The method also includes generating a plasma at the substrate by applying a RF bias to the substrate support, wherein the RF bias is provided at a power of about
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