Method, method for minimizing surface roughness of patterned feature, and ion beam implanter

Abstract

Disclosed herein are approaches for using an angled ion beam treatment for patterning feature surface roughness improvement. In one approach, a method may include providing a plurality of patterned features over a stack of layers on a semiconductor substrate, wherein each of the plurality of patterned features includes a first sidewall and a second sidewall, and wherein an area of roughness is present along the first sidewall or the second sidewall. The method may further include performing an ion beam treatment to the plurality of patterned features by delivering ions at a non-zero angle relative to a perpendicular to a plane defined by an upper surface of the plurality of patterned features.

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