Rotated 3D dram cell

TW202641193APending Publication Date: 2026-10-01APPLIED MATERIALS INC
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Patent Information

Application Number
TW114138760
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-17
Filing Date
2025-10-08
Publication Date
2026-10-01

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Abstract

crystal direction of the semiconductor wafer prior. An epitaxial stack is formed on the semiconductor wafer, and a slit is etched through the epitaxial film stack to expose a sidewall of the epitaxial film stack. The sidewall of the epitaxial film stack is oriented along a plane of the epitaxial film stack that is aligned from
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