In-situ bevel cleaning in pecvd chamber

Abstract

Embodiments disclosed herein generally relate to processes for etching a bevel of a semiconductor substrate in a processing chamber. The process includes lifting a substrate away from an electrostatic chuck (ESC) using lift pins, and generating plasma via provision of a radio frequency (RF) bias to the ESC, where the plasma etches the substrate and includes a high density plasma formed below the substrate and having a first charge carrier density, and a low density plasma formed above the substrate and having a second charge carrier density lower than the first charge carrier density. Implementing such processes for etching the bevel results in various improvements in the manufacturing of semiconductor substrates.

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