Etching method and plasma treatment device

TW202641197APending Publication Date: 2026-10-01TOKYO ELECTRON LTD
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Patent Information

Application Number
TW115101981
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2026-01-15
Filing Date
2026-01-19
Publication Date
2026-10-01

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Abstract

In one exemplary embodiment of the present invention, the etching method includes the following steps: (a) providing a substrate to a substrate support portion within a cavity, the substrate having a first film and a second film located on the first film and having an opening, the first film comprising a metallic element and a non-metallic element; and (b) exposing the substrate to a first plasma generated from a first processing gas containing halogens, phosphorus and oxygen, thereby forming a recess in the first film.
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