Ultraviolet-assisted etching of silicon-and-germanium-containing materials

TW202641202APending Publication Date: 2026-10-01APPLIED MATERIALS INC
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Patent Information

Application Number
TW115101037
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-13
Filing Date
2026-01-12
Publication Date
2026-10-01

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Abstract

Exemplary semiconductor processing methods may include providing an etchant precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A layer of material may be disposed on the substrate. The methods may include directing an ultraviolet (UV) light source into the processing region. The methods may include contacting the layer of material with the etchant precursor. The contacting may etch the layer of material.
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