Substrate processing method and substrate processing apparatus

TW202641207APending Publication Date: 2026-10-01TOKYO ELECTRON LTD
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Patent Information

Application Number
TW115100896
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-22
Filing Date
2026-01-09
Publication Date
2026-10-01

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Patent Text Reader

Abstract

The objective of this invention is to provide a technique for efficiently etching atomic layers of a ruthenium-containing metal film. The solution is as follows: The disclosed substrate processing method comprises: treating the surface of a ruthenium-containing metal film with a first processing solution to form a metal chloride on the surface of the metal film; and removing the metal chloride with a second processing solution.
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