Cleaning method of reaction chamber used in semiconductor or display process

TW202641234APending Publication Date: 2026-10-01SK MATERIALS CO LTD
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Patent Information

Application Number
TW115111455
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-26
Filing Date
2026-03-25
Publication Date
2026-10-01

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Abstract

The present invention relates to a method for cleaning a reaction chamber used in semiconductor or display processes, the method comprising cleaning residues present in at least a portion of the reaction chamber using a cleaning gas containing FNO gas, wherein the residues include one or more of a silicon nitride film, a silicon oxide film, and an amorphous carbon film.
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