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Abstract

Embodiments of this application provide a wafer cleaning method, including rotating the wafer at a first rotational speed and spraying ozone water onto the wafer until an oxide film formed by the reaction of the ozone water and the wafer completely covers the front side of the wafer; spraying hydrofluoric acid solution onto the wafer to remove the oxide film; wherein the first rotational speed is higher than a critical rotational speed, and at the critical rotational speed, the number of particles formed by the reaction of ozone water on the wafer with impurities in the environment is a preset value. The wafer cleaning method of this application can obtain a clean wafer.

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