Method of manufacturing photomask

TW202641305APending Publication Date: 2026-10-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW114118841
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-28
Filing Date
2025-05-20
Publication Date
2026-10-01

Smart Images

  • Figure TWG2TA001078153_001
    Figure TWG2TA001078153_001
  • Figure TWG2TA001078153_002
    Figure TWG2TA001078153_002
  • Figure TWG2TA001078153_003
    Figure TWG2TA001078153_003
Patent Text Reader

Abstract

An embodiment method of manufacturing a photomask includes depositing a first lower insulation portion of a first insulation structure over a substrate in a vertical direction and forming a first light blocking structure over the first lower insulation portion in the vertical direction, where the first lower insulation portion is between the first light blocking structure and the substrate. The method further includes depositing a first upper insulation portion of the first insulation structure covering at least an upper surface of the first light blocking structure. The first insulation structure and the first light blocking structure constitute a first mask pattern structure. One or more characteristics of the first light blocking structure, the first lower insulation portion, and the first upper insulation portion are configured such that an overall light transmittance of the first mask pattern structure along the vertical direction ranges from
Need to check novelty before this filing date? Find Prior Art