Three-dimensional memory device and method of forming three-dimensional memory device

Abstract

Embodiments of a three-dimensional (3D) memory device and a method for forming the 3D memory device are disclosed. In an example, a 3D memory device includes a film stacked layer. The film stacked layer includes a plurality of conductive layer / dielectric layer pairs stacked vertically on a substrate. Each conductive layer / dielectric layer pair includes a dielectric layer and a conductive layer. The 3D memory device further includes a staircase region. The staircase region includes a first staircase structure and a second staircase structure formed in the film stacked layer. Both the first staircase structure and the second staircase structure extend in a first direction and include a plurality of conductive layer / dielectric layer pairs. The staircase region further includes a staircase bridge connecting the first staircase structure and the second staircase structure.

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