Semiconductor device manufacturing method

Abstract

A method for manufacturing a semiconductor device capable of properly manufacturing a semiconductor device. The method for manufacturing a semiconductor device (MD) includes: a step of depositing a first layer (162) on a first wafer (SS) having silicon as the main component and containing germanium and oxygen; a step of forming a first element (MCA) and a first bonding electrode (PI1) on the first wafer; a step of forming a second element (Tr) and a second bonding electrode (PI2) on a second wafer (SB); a step of bonding the first wafer and the second wafer through the first bonding electrode and the second bonding electrode; and a step of causing the first layer to crack by irradiating the first layer with laser light through a first substrate (150).

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