Integrated circuit structure
TW202641333APending Publication Date: 2026-10-01INVENTION & COLLABORATION LABORATORY INC
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Patent Information
- Application Number
- TW115109655
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-17
- Filing Date
- 2026-03-16
- Publication Date
- 2026-10-01
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Abstract
An integrated circuit structure includes a plurality of semiconductor dice and a laterally extending thermal conductivity layer. Each semiconductor die includes a top surface, a bottom surface opposite to the top surface, a first sidewall, a second sidewall, a third sidewall and a fourth sidewall. An area of the bottom surface or the top surface of each semiconductor die is larger than an area of any of the first sidewall, the second sidewall, the third sidewall and the fourth sidewall. The laterally extending thermal conductivity layer covers each second sidewall of the plurality of semiconductor dice. A thermal conductivity of the laterally extending thermal conductivity layer is higher than that of Si. The laterally extending thermal conductivity layer has a bonding surface coupled to the second sidewalls of the plurality of semiconductor dice and an uneven or rough surface which is opposite to the bonding surface.
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