Integrated circuit structure

TW202641333APending Publication Date: 2026-10-01INVENTION & COLLABORATION LABORATORY INC
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Patent Information

Application Number
TW115109655
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-17
Filing Date
2026-03-16
Publication Date
2026-10-01

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Abstract

An integrated circuit structure includes a plurality of semiconductor dice and a laterally extending thermal conductivity layer. Each semiconductor die includes a top surface, a bottom surface opposite to the top surface, a first sidewall, a second sidewall, a third sidewall and a fourth sidewall. An area of the bottom surface or the top surface of each semiconductor die is larger than an area of any of the first sidewall, the second sidewall, the third sidewall and the fourth sidewall. The laterally extending thermal conductivity layer covers each second sidewall of the plurality of semiconductor dice. A thermal conductivity of the laterally extending thermal conductivity layer is higher than that of Si. The laterally extending thermal conductivity layer has a bonding surface coupled to the second sidewalls of the plurality of semiconductor dice and an uneven or rough surface which is opposite to the bonding surface.
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