Die-to-die input / output integrated circuit structure and manufacturing method thereof
TW202641337APending Publication Date: 2026-10-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Application Number
- TW114117660
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-24
- Filing Date
- 2025-05-12
- Publication Date
- 2026-10-01
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Abstract
Die-to-die input / output integrated circuit (IC) structures and methods are provided. An IC structure comprises a first ESD protection circuit region, a frontside interconnect structure, and backside interconnect structure. The first ESD protection circuit region is disposed between a first buffer circuit region and a second buffer circuit region along a first direction on a substrate. The frontside interconnect structure is disposed over the substrate and has a first frontside metal line extending in a first direction and a second frontside metal line extending in a second direction perpendicular to the first direction. The first ESD protection circuit protection region is electrically coupled to the first and second buffer circuit regions through the first frontside metal line.
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