Die-to-die input / output integrated circuit structure and manufacturing method thereof

TW202641337APending Publication Date: 2026-10-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114117660
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-24
Filing Date
2025-05-12
Publication Date
2026-10-01

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Abstract

Die-to-die input / output integrated circuit (IC) structures and methods are provided. An IC structure comprises a first ESD protection circuit region, a frontside interconnect structure, and backside interconnect structure. The first ESD protection circuit region is disposed between a first buffer circuit region and a second buffer circuit region along a first direction on a substrate. The frontside interconnect structure is disposed over the substrate and has a first frontside metal line extending in a first direction and a second frontside metal line extending in a second direction perpendicular to the first direction. The first ESD protection circuit protection region is electrically coupled to the first and second buffer circuit regions through the first frontside metal line.
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