Semiconductor structure and method of fabricating the same

Abstract

Bonded die structures including a first semiconductor die having a back-side power distribution network (PDN) and at least one additional functional die bonded to the first semiconductor die at a bonding interface. The additional functional die may include a memory die bonded over a front side of the first semiconductor die opposite the PDN. Alternatively, or in addition, the at least one functional die may include a deep trench capacitor (DTC) die bonded over the PDN on the back side of the first semiconductor die. Various embodiments may provide increased functionality of a bonded die structure with improved signal integrity and power integrity.

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