Package substrate and fabricating method thereof

TW202641378AActive Publication Date: 2026-10-01AALTOSEMI INC
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Patent Information

Application Number
TW114115003
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-21
Filing Date
2025-04-21
Publication Date
2026-10-01
Estimated Expiration
2045-04-20

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  • Figure TWG2TA001078094_003
    Figure TWG2TA001078094_003
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Abstract

A packaging substrate is made by on a wiring layer formed on a semiconductor plate body, forming a plurality of conductive pillars electrically connected to the wiring layer, and then forming molten glass on the wiring layer and the conductive pillars, and then solidifying the molten glass to form a glass layer, so as to form a circuit layer electrically connected to the plurality of conductive pillars on the glass layer. Therefore, by forming a glass layer from the molten glass, the material properties of the semiconductor plate body are closer to those of the glass layer, so that the bonding strength between the semiconductor plate body and the glass layer can be improved during the layer-building process.
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Claims

1. A packaging substrate, comprising: A board having a wiring layer is a semiconductor board, and a plurality of conductive vias electrically connected to the wiring layer are formed therein; a plurality of conductive pillars are formed on the wiring layer and electrically connected to the wiring layer; a glass layer is formed on the board to cover the wiring layer and the conductive pillars, and the glass layer is formed by cooling and solidifying molten glass; and a circuit layer is formed on the glass layer and electrically connected to the plurality of conductive pillars.

2. The packaging substrate as described in claim 1, wherein, The plate system is made of quartz glass.

3. The packaging substrate as described in claim 1, wherein, The glass system includes borosilicate glass or lead-free glass of the bismuth series.

4. The packaging substrate as described in claim 1, wherein, The melting point of this glass layer is 700 to 850°C.

5. The packaging substrate as described in claim 1, wherein, The glass transition temperature of the glass layer is 300 to 400°C lower than that of the plate.

6. A method for manufacturing a packaging substrate, comprising: A board with a wiring layer is provided, which is a semiconductor board, and a plurality of conductive vias electrically connected to the wiring layer are formed in the board; a plurality of conductive pillars electrically connected to the wiring layer are formed on the wiring layer to obtain a substrate structure. Molten glass is formed on the substrate structure to cover the wiring layer and conductive pillars; the molten glass is cured to form a glass layer; and a wiring layer electrically connected to the plurality of conductive pillars is formed on the glass layer.

7. The method for manufacturing the packaging substrate as described in claim 6, wherein, The plate system is made of quartz glass.

8. The method for manufacturing the packaging substrate as described in claim 6, wherein, This molten glass system includes borosilicate glass or lead-free glass of the bismuth series.

9. The method for manufacturing the packaging substrate as described in claim 6, wherein, The melting point of this molten glass is 700 to 850°C.

10. The method for manufacturing the packaging substrate as described in claim 6, wherein, The glass transition temperature of the glass layer is 300 to 400°C lower than that of the plate.

11. The method for manufacturing the packaging substrate as described in claim 6, wherein, The molten glass system is solidified into this glass layer by cooling.

12. The method for manufacturing the packaging substrate as described in claim 6, wherein, The step of solidifying the molten glass also includes annealing at 200 to 300°C to relieve stress in the formed glass layer.