Packaging lid component

Abstract

A packaging lid component is provided and suitable for being disposed over a semiconductor chip. The packaging lid component includes a ceramic-based lid and a metal surface layer. The ceramic-based lid has a continuous non-metal phase and a solid metal phase dispersed in the non-metal phase. The non-metal phase includes silicon carbide, and the solid metal phase includes a highly thermally conductive metal material. The metal surface layer is coated on an outside of the ceramic-based lid and formed from the highly thermally conductive metal material. Therefore, the packaging lid component can have high rigidity, high thermal conductivity, high strength, and good thermal dimensional stability.

Description

Technical Field

[0001] This invention relates to a packaging device, and more particularly to a cover device for semiconductor packaging, which can be used in advanced packaging such as chip-on-wafer-on-substrate (CoWoS). Prior Technology

[0002] Advanced packaging integrates different systems into a single package. For example, it combines different types of chips through packaging and stacking technologies to improve the overall performance of semiconductor devices, including transmission speed and processing speed, while also reducing size and power consumption. However, with the development of advanced packaging technology, factors such as uneven thermal stress caused by the interaction of various materials, various packaging parameters (such as temperature, humidity, and pressure), and package geometry can easily lead to phenomena such as thermal expansion coefficient mismatch (CTE mismatch), warpage, delamination, peeling, and cracking. Summary of the Invention

[0003] The technical problem to be solved by this invention is to provide a cover device for packaging, addressing the shortcomings of existing technologies. The concept of this invention is to mount a high thermal conductivity metal material onto a ceramic-based porous carrier to form an integrated structure; this structure exhibits excellent thermal and mechanical properties, thus possessing broad application prospects in the field of advanced packaging.

[0004] To address the aforementioned technical problems, one technical solution adopted by this invention is to provide a packaging cover device suitable for placement on a semiconductor wafer. The packaging cover device includes a ceramic substrate and a metal skin layer. The ceramic substrate has a continuous non-metallic phase and a solid metallic phase dispersed within the non-metallic phase. The non-metallic phase comprises silicon carbide, and the solid metallic phase comprises a high thermal conductivity metal material. The metal skin layer covers the ceramic substrate and is formed of the high thermal conductivity metal material. In this invention, the flexural strength of the packaging cover device is greater than 400 MPa, the coefficient of thermal expansion of the packaging cover device is 6~20×10⁻⁶ / K, and the thermal conductivity of the packaging cover device is greater than 180 W / mK.

[0005] In a feasible or preferred embodiment of the present invention, the non-metallic phase is a ceramic-based porous carrier, and the high thermal conductivity metal material fills the pores of the ceramic-based porous carrier to form the solid metal phase.

[0006] In a feasible or preferred embodiment of the present invention, the porosity of the ceramic-based porous carrier is 20% to 70%.

[0007] In a feasible or preferred embodiment of the present invention, the ceramic-based porous carrier is composed of small-diameter particles, medium-diameter particles and large-diameter particles, and the particle size ratio of the small-diameter particles, the medium-diameter particles and the large-diameter particles is 1:2-2.5:3-20.

[0008] In a feasible or preferred embodiment of the present invention, the particle size of the small-diameter particles is in the range of 0.1 μm to 5 μm, the particle size of the medium-diameter particles is in the range of 2 μm to 10 μm, and the particle size of the large-diameter particles is in the range of 10 μm to 100 μm.

[0009] In a feasible or preferred embodiment of the present invention, based on the total weight of the ceramic-based porous carrier, the weight ratio of the small-diameter particles, the medium-diameter particles, and the large-diameter particles is 1:3:4.

[0010] In a feasible or preferred embodiment of the present invention, more than 99% of the small-diameter particles, the medium-diameter particles and the large-diameter particles are silicon carbide particles.

[0011] In a feasible or preferred embodiment of the present invention, less than 30% of the small-diameter particles, the medium-diameter particles, and the large-diameter particles are silicon carbide particles.

[0012] In a feasible or preferred embodiment of the present invention, the thickness of the metal skin layer is greater than 5 μm.

[0013] In a feasible or preferred embodiment of the present invention, the metal skin layer covers an outer surface of the ceramic substrate, and the metal skin layer and the ceramic substrate satisfy the following relationship: 2A / T is less than or equal to 50%; A represents the coverage thickness of the metal skin layer on the outer surface; T represents the sum of the thickness of the metal skin layer and the thickness of the ceramic substrate.

[0014] In a feasible or preferred embodiment of the present invention, the non-metallic phase of the ceramic substrate comprises at least one of single-crystal silicon, diamond, diamond-like material, boron nitride, and graphene.

[0015] In a feasible or preferred embodiment of the present invention, the high thermal conductivity metal material is aluminum, copper, silver or an alloy thereof.

[0016] In a feasible or preferred embodiment of the present invention, the thermal conductivity of the encapsulation cover device is 250~350 W / mK.

[0017] In general, the encapsulation cover device provided by the present invention, through the combination of the technical features "the ceramic substrate cover has a continuous non-metallic phase and a solid metallic phase dispersed in the non-metallic phase, the non-metallic phase includes silicon carbide, and the metallic phase includes a high thermal conductivity metal material" and "a metal skin layer is coated on the ceramic substrate cover, and the metal skin layer is formed of a high thermal conductivity metal material", can have many excellent properties, including high rigidity, high thermal conductivity, high strength and good thermal dimensional stability, and is very suitable for application in advanced packaging architectures of one or more semiconductor chips (semiconductor wafers).

[0018] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are for reference and illustration only and are not intended to limit the present invention. Simple Explanation of the Diagram

[0019] Figure 1 is a three-dimensional cross-sectional view of the encapsulation cover device of the present invention.

[0020] Figure 2 is another perspective cross-sectional view of the encapsulation cover device of the present invention.

[0021] Figure 3 is an enlarged schematic diagram of part III of Figure 1.

[0022] Figure 4 is a schematic diagram of a packaging architecture including the packaging cover device of the present invention. Implementation

[0023] The following specific embodiments illustrate the implementation of the "encapsulation cover device" disclosed in this invention. Those skilled in the art can understand the advantages and effects of this invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this invention. Furthermore, the accompanying drawings of this invention are for simple illustrative purposes only and are not depictions of actual dimensions; this is stated beforehand. The following embodiments will further describe the relevant technical content of this invention in detail, but the disclosed content is not intended to limit the scope of protection of this invention.

[0024] It should be understood that while terms such as "first," "second," and "third" may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another, or one signal from another. Furthermore, the term "or" as used herein should, as appropriate, include any combination of one or more of the associated listed items.

[0025] Please refer to Figures 1 to 3. Figures 1 and 2 show the three-dimensional structure of the encapsulation cover device 4 according to an embodiment of the present invention, and Figure 3 shows a partial structural feature of the encapsulation cover device 4 according to an embodiment of the present invention. As shown in the figures above, the encapsulation cover device 4 of the present invention includes a ceramic substrate cover 41 and a metal skin layer 42. The metal skin layer 42 covers the ceramic substrate cover 41 and forms an integrated structure with it. Compared with conventional cover devices made of metal materials, this structure has better thermal and mechanical properties, thus having broad application prospects in the field of advanced packaging. For example, the encapsulation cover device 4 of the present invention can be placed on a semiconductor wafer to dissipate the heat generated by the semiconductor wafer.

[0026] In this invention, the ceramic substrate cap 41 has a continuous non-metallic phase 41A and a solid metallic phase 41B dispersed in the non-metallic phase 41A, wherein the non-metallic phase 41A comprises silicon carbide, and the solid metallic phase 41B comprises a high thermal conductivity metal material 414. Furthermore, the metal skin layer 42 is formed of the high thermal conductivity metal material 414. Therefore, the encapsulation cap device 4 can possess many excellent characteristics, including high rigidity, high thermal conductivity, high strength, and good thermal dimensional stability, making it very suitable for advanced packaging architectures for one or more semiconductor chips (semiconductor wafers).

[0027] Due to the above-mentioned technical features, the flexural strength of the encapsulation cover device 4 is greater than 400 MPa, preferably 400 MPa to 600 MPa; the coefficient of thermal expansion (CTE) of the encapsulation cover device 4 is 6~20×10-6 / K; and the thermal conductivity of the encapsulation cover device 4 is greater than 180 W / mK, preferably 250~350 W / mK.

[0028] The high thermal conductivity metal material 414 suitable for this invention can be, but is not limited to, metals such as aluminum, copper, and silver, or alloys containing aluminum, copper, or silver. In practical applications, the ceramic substrate cover 41 can be subjected to a liquid-phase metal infiltration treatment, allowing the high thermal conductivity metal material 414 to infiltrate into the ceramic substrate cover 41 in the form of molten metal; or, the ceramic substrate cover 41 can be subjected to a gas-phase metal infiltration treatment, allowing the high thermal conductivity metal material 414 to infiltrate into the ceramic substrate cover 41 in the form of metal vapor. In addition, during the treatment process, molten metal or metal vapor can be deposited and adhered on the outer surface 41S (such as the upper surface and / or lower surface) of the ceramic substrate cover 41, further forming a metal skin layer 42 that completely covers the outer surface 41S of the ceramic substrate cover 41.

[0029] In one embodiment, the high thermal conductivity metal material 414 is an aluminum-copper alloy, wherein the copper content is in the range of 20% to 80%. In another embodiment, the high thermal conductivity metal material 414 is an aluminum-copper-silver alloy, wherein the copper content is in the range of 20% to 80%, and the silver content is in the range of 5% to 30%. Therefore, the temperature required for metal infiltration processing can be reduced, and the thermal conductivity of the device can be improved.

[0030] Furthermore, the non-metallic phase 41A of the ceramic-based cap 41 is a ceramic-based porous carrier, wherein the porosity of the ceramic-based porous carrier can be 20% to 70%, that is, the pore volume inside the ceramic-based porous carrier can account for 20% to 70% of its total volume. Depending on the mechanical and thermal conductivity requirements, the non-metallic phase 41A of the ceramic-based cap 41 may further include at least one of single-crystal silicon, diamond, diamond-like materials, boron nitride, and graphene. In addition, a high thermal conductivity metallic material 414 fills the pores of the ceramic-based porous carrier to form a solid metallic phase 41B.

[0031] As shown in Figure 3, the non-metallic phase 41A of the ceramic-based cap 41 can be composed of small-diameter particles 413, medium-diameter particles 412, and large-diameter particles 411, with a particle size ratio of 1:2-2.5:3-20. In practical applications, the particle size of the small-diameter particles 413 can be 0.1 μm to 5 μm, the particle size of the medium-diameter particles 412 can be 2 μm to 10 μm, and the particle size of the large-diameter particles 411 can be 10 μm to 100 μm. Preferably, based on the total weight of the ceramic-based porous carrier, the weight ratio of the small-diameter particles 413, medium-diameter particles 412, and large-diameter particles 411 is 1:3:4.

[0032] It should be noted that as the size (e.g., thickness) of the ceramic-based porous carrier changes, the particle sizes of the small-diameter particles 413, medium-diameter particles 412, and large-diameter particles 411 will increase or decrease according to the aforementioned proportions. Furthermore, the small-diameter particles 413, medium-diameter particles 412, and large-diameter particles 411 can be linked together by sintering or bonding, and can be stacked together to form an integrated structure (e.g., a blocky or sheet-like structure).

[0033] In one embodiment, the non-metallic phase 41A of the ceramic substrate 41 is primarily silicon carbide, with over 99% of the particles in the small-diameter particles 413, medium-diameter particles 412, and large-diameter particles 411 being silicon carbide particles. Therefore, the thermal conductivity of the ceramic substrate 41 can be improved.

[0034] In another embodiment, the non-metallic phase 41A of the ceramic substrate 41 is silicon carbide and diamond, wherein less than 30% of the particles in the small-diameter particles 413, medium-diameter particles 412, and large-diameter particles 411 are silicon carbide particles. Therefore, the formability of the ceramic substrate 41 can be improved.

[0035] In another embodiment, the non-metallic phase 41A of the ceramic substrate 41 is primarily graphene, wherein less than 1% of the particles in the small-diameter particles 413, medium-diameter particles 412, and large-diameter particles 411 are silicon carbide particles. Therefore, the thermal conductivity of the ceramic substrate 41 can be improved.

[0036] Please refer to Figure 4, which illustrates a packaging architecture Z in which the packaging cover device 4 of the present invention is applied. As shown in Figure 4, this packaging architecture Z includes the packaging cover device 4 of the present invention, an annular device 1, a substrate 2, and a semiconductor wafer 3. Specifically, the annular device 1 is disposed on the substrate 2, the semiconductor wafer 3 is bonded to the substrate 2, and disposed within the receiving area 1A of the annular device 1. The packaging cover device 4 of the present invention is disposed on the annular device 1 and is located above the receiving area 1A to cover the semiconductor wafer 3.

[0037] In practical applications, the annular device 1 can be bonded to the substrate 2 via a first adhesive layer 5, and the encapsulation cover device 4 of the present invention can be bonded to the annular device 1 via a second adhesive layer 6. Additionally, the semiconductor wafer 3 can be attached to the substrate 2 via an underfill layer 9 and electrically connected to the substrate 2 via multiple connecting bumps 8 (such as multiple solder bumps); the underfill layer 9 can be formed around the semiconductor wafer 3 and fill the gap between the semiconductor wafer 3 and the substrate 2. Furthermore, a third adhesive layer 7 (such as a thermal interface material) can be provided between the encapsulation cover device 4 of the present invention and the semiconductor wafer 3. However, the above descriptions are merely feasible embodiments and are not intended to limit the present invention.

[0038] As shown in Figure 2, the encapsulation cover device 4 of the present invention can be formed as needed to include a plate 4A and a frame 4B extending from one of the surfaces of the plate 4A, and the plate 4A and the frame 4B are integrally formed.

[0039] [Beneficial Effects of the Examples]

[0040] The encapsulation cover device provided by this invention, through the combination of the technical features "the ceramic substrate cover has a continuous non-metallic phase and a solid metallic phase dispersed in the non-metallic phase, the non-metallic phase includes silicon carbide, and the metallic phase includes a high thermal conductivity metal material" and "a metal skin layer covers the ceramic substrate cover, and the metal skin layer is formed of a high thermal conductivity metal material", can have many excellent properties, including high rigidity, high thermal conductivity, high strength and good thermal dimensional stability, and is very suitable for application in advanced packaging architectures of one or more semiconductor chips (semiconductor wafers).

[0041] Furthermore, the encapsulation cover device provided by this invention can be applied to advanced packaging, effectively avoiding phenomena such as thermal expansion coefficient mismatch, warping, delamination and peeling, and cracking, thereby improving process yield and reducing costs.

[0042] The content disclosed above is only a preferred and feasible embodiment of the present invention, and is not intended to limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention specification and drawings are included in the scope of the patent application of the present invention.

[0043] Z: Packaging Architecture 1: Ring-shaped device 1A: Storage Area 2:Substrate 3: Semiconductor wafers 4: Cover components 4A: Board body 4B: Frame 41: Ceramic base cover 41A: Nonmetallic phase 41B: Solid metallic phase 41S: Outer surface 411: Large-diameter particles 412: Medium-sized particles 413: Small-diameter particles 414: High thermal conductivity metallic materials 42: Metallic skin layer 5: First adhesive layer 6: Second adhesive layer 7: Third adhesive layer 8: Connecting bumps 9: Bottom fill layer

Claims

1. A packaging cap device adapted to be disposed on a semiconductor wafer, said packaging cap device comprising: A ceramic-based cap has a continuous non-metallic phase and a solid metallic phase dispersed in the non-metallic phase, wherein the non-metallic phase comprises silicon carbide and the solid metallic phase comprises a highly thermally conductive metallic material. The device comprises a metal skin layer covering the ceramic substrate, wherein the metal skin layer is formed of the high thermal conductivity metal material; wherein the non-metallic phase is a ceramic-based porous carrier, and the high thermal conductivity metal material fills the pores of the ceramic-based porous carrier to form the solid metal phase; wherein the ceramic-based porous carrier is composed of small-diameter particles, medium-diameter particles, and large-diameter particles, and the particle size ratio of the small-diameter particles, the medium-diameter particles, and the large-diameter particles is 1:2-2.5:3-20; wherein the flexural strength of the encapsulation cover device is greater than 400 MPa, the coefficient of thermal expansion of the encapsulation cover device is 6~20×10-6 / K, and the thermal conductivity of the encapsulation cover device is greater than 180 W / mK.

2. The encapsulation cover device as described in claim 1, wherein, The porosity of the ceramic-based porous carrier is 20% to 70%.

3. The encapsulation cover device as described in claim 1, wherein, The small-diameter particles have a diameter in the range of 0.1 μm to 5 μm, the medium-diameter particles have a diameter in the range of 2 μm to 10 μm, and the large-diameter particles have a diameter in the range of 10 μm to 100 μm.

4. The encapsulation cover device as described in claim 1, wherein, Based on the total weight of the ceramic-based porous carrier, the weight ratio of the small-diameter particles, the medium-diameter particles, and the large-diameter particles is 1:3:

4.

5. The encapsulation cover device as described in claim 1, wherein, More than 99% of the small-diameter particles, medium-diameter particles, and large-diameter particles are silicon carbide particles.

6. The encapsulation cover device as described in claim 1, wherein, Less than 30% of the small-diameter particles, medium-diameter particles, and large-diameter particles are silicon carbide particles.

7. The encapsulation cover device as described in claim 1, wherein, The thickness of the metal skin layer is greater than 5 μm.

8. The encapsulation cover device as described in claim 7, wherein, The metal skin layer covers an outer surface of the ceramic substrate, and the metal skin layer and the ceramic substrate satisfy the following relationship: 2A / T is less than or equal to 50%; A represents the coverage thickness of the metal skin layer on the outer surface; T represents the sum of the thickness of the metal skin layer and the thickness of the ceramic substrate.

9. The encapsulation cover device as described in claim 1, wherein, The non-metallic phase of the ceramic substrate comprises at least one of single-crystal silicon, diamond, diamond-like material, boron nitride, and graphene.

10. The encapsulation cover device as described in claim 1, wherein, The high thermal conductivity metal material is aluminum, copper, silver, or their alloys.

11. The encapsulation cover device as described in claim 1, wherein, The thermal conductivity of the encapsulation cover device is 250~350 W / mK.

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