Heterogeneous semiconductor structure

TW202641391APending Publication Date: 2026-10-01ND HITECHNOLOGIESLAB INC +1
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Patent Information

Application Number
TW115123889
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2022-06-30
Filing Date
2023-03-28
Publication Date
2026-10-01

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Abstract

present invention discloses a method to form a composite semiconductor wafer with a first dimension. The method comprises: attaching a set of thermal dissipation layers to a temporary carrier; bonding the temporary carrier with the set of thermal dissipation layers to a semiconductor substrate with the first dimension, such that the set of thermal dissipation layers are bonded to the semiconductor substrate; and removing the temporary carrier to form composite semiconductor wafer with the first dimension.
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