Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
TW202641775APending Publication Date: 2026-10-16HOYA CORPORATION
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Patent Information
- Application Number
- TW115105679
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-17
- Filing Date
- 2026-02-12
- Publication Date
- 2026-10-16
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Figure TWG2TA001081114_001 
Figure TWG2TA001081114_002
Abstract
[Problem] To provide a reflective mask blank for manufacturing a reflective mask that can keep pattern dimension variations within an allowable range, even when subjected to repeated heating and cooling treatments during mask fabrication, cleaning, and exposure while the mask is in use. [Solution] The reflective mask blank comprises a substrate, a multilayer reflective film deposited on the substrate, and an absorber film formed on the multilayer reflective film. The absorber film comprises a first layer having a structure such that a diffraction angle 2θin of the highest intensity peak obtained by X-ray diffraction analysis using an In-plane method is equal to or less than a diffraction angle 2θout of the highest intensity peak obtained by X-ray diffraction analysis using an Out-of-plane method.
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