Method for forming the semiconductor device and photoresist protection layer composition

TW202641874APending Publication Date: 2026-10-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114119934
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-04-01
Filing Date
2025-05-27
Publication Date
2026-10-16

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Abstract

A method for forming a semiconductor device and a photoresist protection layer composition are provided. The method includes forming a process layer. A metallic type photoresist layer is formed over the process layer. A photoresist protection layer is formed over the metallic type photoresist layer. The metallic type photoresist layer is exposed using patterned radiation in the presence of an immersion fluid in contact with the photoresist protection layer. A developing process is performed to remove the photoresist protection layer and to define a photoresist pattern based on the patterned radiation in the metallic type photoresist layer. The process layer is processed using the photoresist pattern as a template.
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