Composition for forming resist underlayer film and method for manufacturing semiconductor substrate
TW202641882APending Publication Date: 2026-10-16JSR CORPORATION
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Patent Information
- Application Number
- TW115109351
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-31
- Filing Date
- 2026-03-13
- Publication Date
- 2026-10-16
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Abstract
This invention provides a resist underlayer film forming composition capable of forming a resist underlayer film with excellent pattern rectangularity and pattern peeling inhibition, and a method for manufacturing a semiconductor substrate. A resist underlayer film forming composition comprises a polymer and a solvent. The polymer comprises a repeating unit (I) having at least one monovalent group (X) selected from the group represented by formula (2-1), formula (2-2), formula (2-3), formula (2-4), formula (2-5), formula (2-6), formula (2-7), and formula (2-8), and at least: the polymer comprises a repeating unit (II) containing an onium salt structure having a crosslinking forming group; or the resist underlayer film forming composition further contains an onium salt compound having a crosslinking forming group.
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