Method for manufacturing group III nitride elements and elements produced by the method

Abstract

A method for manufacturing a group III nitride device includes the following steps: a) providing a silicon carbide substrate; b) forming at least one two-dimensional material layer on the silicon carbide substrate; c) epitaxially forming at least one matching seed layer on the two-dimensional material layer, the seed layer having a lattice and a coefficient of thermal expansion matched to the silicon carbide substrate; d) forming at least one group III nitride device body on the matching seed layer, the matching seed layer having a lattice and a coefficient of thermal expansion matched to the matching seed layer; e) separating the group III nitride device body from the two-dimensional material layer and transferring it to a high thermal conductivity substrate for granulation and encapsulation; and f) cleaning and recycling the silicon carbide substrate.

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