Aluminum hydride precursor for aluminum metal ald

Abstract

Embodiments of the present disclosure relate to compositions and methods for forming metal films.In at least some embodiment, a composition of matter includes a metal-hydride precursor represented by a general formula (I), a general formula (II) , or oligomers thereof, where M is a trivalent metal and each of R1, R2, R3, R3', R4, and R4' independently include a C1-C20 unsubstituted alkyl group, a C1-C20 substituted alkyl group, a C1-C20 unsubstituted alkenyl group, a C1-C20 substituted alkenyl group, a C1-C20 unsubstituted alkynyl group, a C1-C20 substituted alkynyl group, a trialkylsilyl group, a substituted aromatic group, an unsubstituted aromatic group, a non-metal atom, a non-metal group, or combinations thereof.

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