Membranes and their manufacturing methods

TW202641996APending Publication Date: 2026-10-16TOAGOSEI CO LTD +1
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Patent Information

Application Number
TW114151164
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-24
Filing Date
2025-12-24
Publication Date
2026-10-16

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Abstract

The present invention relates to a method for manufacturing a film containing Sn and Si, comprising: a Sn film formation step, wherein a Sn-containing film is formed using a tin compound as a raw material gas; and a Si film formation step, wherein a Si-containing film is formed using a silicon compound as a raw material gas; wherein the film formation is performed by supplying the raw material gas to a chamber containing a substrate having a film formation surface and by chemical vapor deposition or atomic layer deposition.
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