Aluminum nitride bonding

TW202641998APending Publication Date: 2026-10-16APPLIED MATERIALS INC
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Patent Information

Application Number
TW114138056
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-31
Filing Date
2025-10-02
Publication Date
2026-10-16

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Patent Text Reader

Abstract

Methods of preparing aluminum nitride for bonding without high temperature annealing leverage an inversion domain boundary (IDB) to form a bonding surface composed of aluminum-polar aluminum nitride. In some embodiments, the method may comprise depositing an aluminum nitride layer where at least a portion of a thickness of the aluminum nitride layer is deposited with an oxygen content of approximately three percent by mass and planarizing the aluminum nitride layer with a chemical mechanical planarization (CMP) process immediately after depositing the aluminum nitride layer and prior to a bonding process to form a bonding surface.
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