A method of controlling stress variation in a layer comprising silicon oxycarbide formed using plasma enhanced chemical vapour deposition

Abstract

A method of controlling stress variation in a layer comprising silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system, is disclosed. The method comprises the steps of: - providing a chamber comprising a platen for supporting a substrate; - placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen; - introducing a gas comprising oxygen into the chamber; - introducing trimethylsilane gas into the chamber; - generating a plasma within the chamber; - maintaining a temperature at which deposition takes place to less than

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