In situ defect mitigation in crystal growth

Abstract

Systems and methods for defect mitigation in silicon carbide crystal growth systems are provided. In an aspect, an example method includes providing a crystalline material in a first zone of the crystal growth chamber. In some implementations, the example method includes providing a silicon carbide vapor source material in a second zone of the crystal growth chamber. The example method includes providing an etching agent in the crystal growth chamber. The example method includes controlling a temperature gradient in the crystal growth chamber such that a first temperature in the first zone is greater than a second temperature in the second zone to implement an etching process on the crystalline material in the crystal growth chamber.

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