Composite structure including a layer of single-crystal iii-v compound material, and associated manufacturing process

TW202642022APending Publication Date: 2026-10-16SOITEC SA
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Patent Information

Application Number
TW114149642
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-20
Filing Date
2025-12-17
Publication Date
2026-10-16

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Abstract

The invention relates to a composite structure comprising: - a seed layer of single-crystal III-V compound material extending in a main plane, - a support substrate made of crystalline material, on which the seed layer is disposed via a bonding interface, the support substrate comprising a peripheral edge devoid of seed layer material, the peripheral edge extending around a border of the seed layer in the main plane, - an intermediate layer made of amorphous material, arranged between the seed layer and the support substrate and present on the peripheral edge, - at least one trench present in the peripheral edge, extending, according to an axis normal to the main plane, through the intermediate layer to the support substrate, or even into the support substrate, the trench being located less than
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