Multizone reactor for crystal growth
TW202642023APending Publication Date: 2026-10-16WOLFSPEED INC
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Patent Information
- Application Number
- TW114145982
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-06-16
- Filing Date
- 2025-11-25
- Publication Date
- 2026-10-16
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Figure TWG2TA001080628_001 
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Abstract
Crystal growth systems for growing crystalline material comprising silicon carbide are provided. In one example, the crystal growth system includes a crucible at least partially defining a crystal growth chamber. The crystal growth chamber has a plurality of zones, each zone associated with a different processing profile. The system includes a silicon carbide crystal. The system includes a source material.
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