Method of manufacturing extreme ultraviolet mask, method of manufacturing photomask and a reflective photomask

Abstract

A method of manufacturing an extreme ultraviolet mask includes forming a reflective multilayer stack, a capping layer, an absorber layer, and a hard mask layer over a substrate in sequence. A photoresist layer is formed over the hard mask layer, and the photoresist layer is patterned. The hard mask layer is etched to form a hard mask. The absorber layer is etched to form a patterned absorber layer. The patterned photoresist layer and the hard mask are removed. A first plasma treatment is performed using a plasma formed from a mixture of oxygen and water. The plasma is purged using a mixture of H2 and an inert gas. A second plasma treatment is performed using a plasma formed from a mixture of H2 and an inert gas; and a wet cleaning operation is performed.

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