Nanoimprint lithography mold and lithography method

TW202642270APending Publication Date: 2026-10-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114138462
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-08-05
Filing Date
2025-10-03
Publication Date
2026-10-16

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Abstract

A nanoimprint lithography (NIL) mold includes a mold body, an imprint pattern formed on a front side thereof, and thermal expansion material disposed in and / or on the mold body. A NIL method includes imprinting a pattern of a mold onto a layer disposed on a semiconductor wafer by pressing the pattern onto the layer, and performing overlay correction during the NIL by heating a thermal expansion material disposed in and / or on the mold by applying light thereto. A method includes: forming a pre-layer on a substrate; forming a resist layer over the pre-layer; imprinting a mold into the resist layer; generating an adjusted mold by adjusting a position of a pattern of the mold by heating thermal expansion portions on the mold; patterning the resist layer using the adjusted mold; removing the mold from the resist layer; and transferring a pattern of the resist layer to the pre-layer.
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