Semiconductor device and method of performing read operation on memory device

Abstract

A semiconductor device may include a memory array having a bit line and a memory cell coupled to the bit line. The semiconductor device further includes a sensing circuit to sense data from the memory cell. The semiconductor device further including a pre-charge circuit having an asymmetric clocked inverter having an input terminal, an output terminal, and at least one enable terminal. The input terminal is connected to the bit line. The output terminal is connected to the bit line. In response to receiving an enable signal on the at least one enable terminal, the pre-charge circuit pre-charges the bit line to a pre-charge voltage. The pre-charge voltage is higher than a threshold voltage of a sensing circuit and lower than the supply voltage.

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