Low-cost electrode for metal oxide varistors

TW202642543APending Publication Date: 2026-10-16DONGGUAN LITTELFUSE ELECTRONICS CO LTD
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Patent Information

Application Number
TW115110117
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-31
Filing Date
2026-03-18
Publication Date
2026-10-16

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Abstract

A metal oxide varistor including a metal oxide varistor chip, a first electrode disposed on a first side of the metal oxide varistor chip and a second electrode disposed on a second side of the metal oxide varistor chip, wherein each of the first electrode and the second electrode includes a seed layer formed of a nickel alloy disposed directly on a surface of the metal oxide varistor chip, and a cover layer formed of metal disposed on the seed layer.
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