High voltage divider resistor

Abstract

A high voltage divider resistor includes a thick film resistor, plural first thin film resistors, at least one second thin film resistor, and a thin film capacitor disposed on a substrate. The thick film resistor, the first thin film resistors, and the second thin film resistor are connected in series through a first input inner electrode and first series electrodes. A resistance value of the second thin film resistor is smaller than a resistance value of each of the first thin film resistors. A resistance value of the thick film resistor is smaller than

Description

Technical Field

[0001] This disclosure relates to a manufacturing technique for an electronic component, and more particularly to a high-voltage divider resistor. Prior Technology

[0002] Currently, high-voltage divider circuits on the market, such as the front-end voltage divider sensing circuit of a battery management system (BMS), all use multiple electrodes to connect multiple chip resistors in series on the circuit board, and use the difference in resistance values ​​between the electrodes to achieve voltage distribution.

[0003] However, resistors connected in series are achieved using the same manufacturing process. That is, all resistors in a series connection are either manufactured using a thick-film process or a thin-film process. But the different manufacturing processes result in different resistor characteristics. For example, when a resistor is subjected to a surge or electrostatic discharge, the resistance of a thick-film resistor will decrease, while the resistance of a thin-film resistor will increase. Therefore, the accuracy and stability of the voltage division in a high-voltage divider resistor composed of both thick-film and thin-film resistors connected in series needs improvement. Summary of the Invention

[0004] Therefore, one of the objectives of this disclosure is to provide a high-voltage divider resistor in which a thick-film resistor and a thin-film resistor are connected in series on the same chip, so that the high-voltage divider resistor can simultaneously have the surge absorption capability of a thick-film resistor and the accuracy of a thin-film resistor, thereby making the voltage division of the high-voltage divider resistor more accurate and stable.

[0005] In accordance with the aforementioned objectives of this disclosure, a high-voltage divider resistor is proposed. This high-voltage divider resistor comprises a substrate, a first input internal electrode, a first output internal electrode, a plurality of first series internal electrodes, a thick-film resistor, a plurality of first thin-film resistors, at least one second thin-film resistor, a thin-film capacitor, a first insulating protective layer, a plurality of second internal electrodes, a second insulating protective layer, a plurality of external electrodes, an antimagnetic isolation layer, and a third insulating protective layer. The substrate has a first surface and a second surface opposite to each other. The first input internal electrode and the first output internal electrode are respectively disposed on opposite sides of the first surface. The plurality of first series internal electrodes are arranged separately on the first surface along the direction from the first input internal electrode toward the first output internal electrode. The thick-film resistor is disposed across the first input internal electrode and the adjacent first series internal electrode. The plurality of first thin-film resistors and at least one second thin-film resistor are sequentially disposed across the first series internal electrodes and are separated from each other. The resistance value of each second thin-film resistor is less than the resistance value of each first thin-film resistor. The resistance value of the thick-film resistor is less than 0.5% of the series resistance value of the second thin-film resistor and the first thin-film resistor. A thin-film capacitor is disposed on a first surface and includes a first electrode and a second electrode spaced apart. The first electrode is connected to a first input internal electrode, and the second electrode is connected to a first output internal electrode. A first insulating protective layer covers the first surface and exposes at least a portion of the first input internal electrode, a portion of the first output internal electrode, and the first and last of the first series internal electrodes spanned by a second thin-film resistor. A plurality of second internal electrodes are disposed on the first insulating protective layer and respectively cover the exposed portions of the first input internal electrode and the first output internal electrode, and the first and last of the first series internal electrodes spanned by at least one second thin-film resistor. A second insulating protective layer covers the first surface and the first insulating protective layer and exposes the junction of each second internal electrode. A plurality of external electrodes are respectively disposed on these junctions. An antimagnetic isolation layer is disposed on the second surface. A third insulating protective layer covers the antimagnetic isolation layer.

[0006] According to one embodiment of this disclosure, the high-voltage divider resistor further includes a third internal electrode and a varistor. The third internal electrode is disposed on the first surface and extends from the first input internal electrode toward the first output internal electrode, and is spaced apart from the first output internal electrode. The varistor is disposed across the third internal electrode and the first output internal electrode. The resistance of the varistor is more than 20 times the series resistance. The operating voltage (V 1mA) of the varistor is more than 1.2 times the maximum operating voltage of the high-voltage divider resistor.

[0007] According to one embodiment of the present disclosure, the above-mentioned high-voltage divider resistor further includes two glass protective layers respectively covering the thick film resistor and the varistor.

[0008] According to one embodiment of the present disclosure, the distance between the first series inner electrodes spanned by each first thin-film resistor is 2 to 4 times the distance between the first series inner electrodes spanned by each second thin-film resistor.

[0009] According to one embodiment of the present disclosure, both the first thin-film resistor and the second thin-film resistor have a plurality of resistance-repairing grooves, and the distance between these resistance-repairing grooves is between 10 μm and 30 μm.

[0010] According to one embodiment of this disclosure, the distance between the first electrode and the second electrode is greater than 30 μm and less than 3000 μm. The first electrode, or each first electrode and the second electrode, includes symmetrical tips, wherein the tip angle of the symmetrical tips is 30 degrees to 90 degrees.

[0011] According to one embodiment of this disclosure, the first insulating protective layer that exposes at least a portion of the first input internal electrode comprises a first portion and a second portion. The first portion is opposite to the portion of the first output internal electrode that is exposed, and the second portion is adjacent to the thick film resistor.

[0012] According to one embodiment of this disclosure, the first, second, and third second internal electrodes are respectively disposed on the second portion of the first input internal electrode and the first and last of the first series internal electrodes spanned by the second thin-film resistor. The fourth, fifth, and sixth second internal electrodes are respectively disposed on the first portion of the first input internal electrode, the exposed portion of the first output internal electrode, and the first insulating protective layer between the fourth and fifth electrodes. The junctions of the second internal electrodes among the first, second, and third electrodes, and the junctions among the fourth, fifth, and sixth electrodes, are all equally spaced.

[0013] According to one embodiment of this disclosure, the high-voltage divider resistor further includes an electromagnetic wave isolation layer. The electromagnetic wave isolation layer is disposed on the first insulating protective layer and is located between the first, second, and third inner electrodes and the fourth, fifth, and sixth inner electrodes.

[0014] According to one embodiment of the present disclosure, the high-voltage divider resistor further includes a marking point, wherein the marking point is disposed on the third insulating protective layer.

[0015] According to the above embodiments, the high-voltage divider resistor disclosed herein consists of a thick-film resistor, a high-resistance first thin-film resistor, and a low-resistance second thin-film resistor connected in series. Therefore, it possesses the surge absorption capability of a thick-film resistor and the accuracy of a thin-film resistor, thereby improving the accuracy and stability of the voltage division of the high-voltage divider resistor. Since the resistance of the thick-film resistor is designed to be less than 0.5% of the series resistance of the first and second thin-film resistors, although the resistance of the thick-film resistor decreases due to surge changes, its impact on the overall resistance is reduced to the thousandths level, having a negligible effect on the resistance of the high-voltage divider resistor.

[0016] Furthermore, the thick-film resistor, the first thin-film resistor, and the second thin-film resistor connected in series are connected in parallel to the ground electrode and the thin-film capacitor. An additional varistor (MOV) can be connected in parallel to prevent damage from instantaneous high-voltage surges and static electricity. In addition, the antimagnetic isolation layer and the copper-plated layer of the second inner electrode can reduce the risk of electromagnetic interference and sulfidation environment.

[0017] Furthermore, since the thick-film resistor, the first thin-film resistor, and the second thin-film resistor are fabricated on the same chip, compared to traditional circuits using multiple independent resistor chips in series, the voltage sampling signal not only reduces the accuracy differences in resistance values ​​between the individual chips, but also offers better measurement accuracy, better sampling accuracy for temperature resistance differences, and lower sampling noise. Because the circuit layout can be changed from the traditional multi-chip resistor wiring to a single-chip resistor, the layout space can be significantly reduced, greatly increasing the space utilization and cost advantages of the circuit board. Simple Explanation of the Diagram

[0018] A better understanding of the features disclosed herein can be obtained from the following detailed description taken in conjunction with the accompanying drawings. It should be noted that, according to industry standard practice, the features are not drawn to scale. In fact, the dimensions of the features can be arbitrarily increased or decreased for clarity of discussion. [Figure 1] is a perspective view of a high-voltage divider resistor according to one embodiment of the present disclosure. [Figure 2] is a schematic diagram showing the front of a high-voltage divider resistor according to one embodiment of the present disclosure. [Figure 3] is a schematic diagram illustrating the welding surface of a high-voltage divider resistor according to one embodiment of the present disclosure. [Figure 4] is a schematic diagram of the internal components of a high-voltage divider resistor according to one embodiment of the present disclosure. [Figure 5] is an equivalent circuit diagram of a high-voltage divider resistor according to one embodiment of the present disclosure. [Figure 6] is a cross-sectional schematic diagram of a high-voltage divider resistor obtained along section line AA in Figure 1. [Figure 7] is a cross-sectional schematic diagram of a high-voltage divider resistor obtained along section line BB in Figure 1. [Figure 8] is a cross-sectional schematic diagram of a high-voltage divider resistor obtained along section line CC of Figure 1. Figures 9 through 21 are schematic diagrams illustrating various manufacturing stages of a high-voltage divider resistor according to one embodiment of this disclosure. [Figure 22] is a partial schematic diagram illustrating another pattern of a thin-film capacitor of a high-voltage divider resistor according to one embodiment of the present disclosure. Implementation

[0019] The embodiments of this disclosure are discussed in detail below. However, it will be understood that the embodiments provide many applicable concepts that can be implemented in a wide variety of specific situations. The embodiments discussed and disclosed are for illustrative purposes only and are not intended to limit the scope of this disclosure. All embodiments of this disclosure disclose a variety of different features, but these features can be implemented individually or in combination as needed.

[0020] Furthermore, the terms "first," "second," etc., used in this article do not specifically refer to order or sequence; they are merely used to distinguish elements or operations described using the same technical terms.

[0021] The spatial relationship between the two components described in this disclosure applies not only to the orientation shown in the diagrams, but also to orientations not shown in the diagrams, such as inverted orientations. Furthermore, the terms "connection," "electrical connection," or similar expressions used in this disclosure to refer to the two components are not limited to a direct or electrical connection, but may also include indirect or electrical connections as needed.

[0022] Please refer to Figures 1 to 5, which respectively illustrate a perspective view, a front view 10a, a soldering view 10b, an internal component diagram, and an equivalent circuit diagram of a high-voltage divider resistor 10 according to one embodiment of this disclosure. The high-voltage divider resistor 10 can be applied to automotive-grade or voltage sensing applications such as medical devices, communications equipment, vehicle charging stations, battery management systems (BMS), and engine control units (ECUs). As shown in Figure 1, the high-voltage divider resistor 10 is a flip-chip type.

[0023] As shown in Figure 2, the front surface 10a of the high-voltage divider resistor 10 may have a marking point MP for identifying the soldering pins of the high-voltage divider resistor 10. As shown in Figure 3, in some embodiments, the soldering surface 10b of the high-voltage divider resistor 10 has six soldering pins, specifically implemented by external electrodes OE1 to OE6. External electrode OE1 is the high-voltage input pin. External electrodes OE2 and OE3 are auxiliary soldering pins, serving as a balancing structure during soldering and having no electrical function. External electrode OE4 is the voltage output pin for a high-resistance thin-film resistor. External electrode OE5 is the voltage output pin for a low-resistance thin-film resistor. External electrode OE6 is the ground pin.

[0024] As shown in Figure 4, in some embodiments, the high-voltage divider resistor 10 is fabricated on the same substrate 10, consisting of a thick-film resistor R1, high-resistance first thin-film resistors R2 and R3, a low-resistance second thin-film resistor R4, and a thin-film capacitor C, to integrate these components onto the same chip. A varistor R5 may also be selectively added to the high-voltage divider resistor 10. The thick-film resistor R1, the first thin-film resistors R2 and R3, and the second thin-film resistor R4 are connected in series, and then the thin-film capacitor C and the varistor R5 are connected in parallel. All components share the input electrode E1. However, the output electrode EO1 of the series-connected thick-film resistors R1, R2 and R3, and R4, and the output electrode EO2 of the parallel-connected thin-film capacitor C and varistor R5 are not connected. The output electrode EO2 is grounded. The equivalent circuit diagram of the high-voltage divider resistor 10 is shown in Figure 5.

[0025] Thick-film resistor R1 has low resistance and provides surge absorption. High-resistance first thin-film resistors R2 and R3, and low-resistance second thin-film resistor R4 are used for voltage division measurement. Thin-film capacitor C is an electrostatic discharge (ESD) protection element to prevent damage from static electricity. Varistor R5 prevents damage from instantaneous high-voltage surges.

[0026] Please refer to Figures 6 to 8, which are schematic cross-sectional views of the high-voltage divider resistor 10 obtained along section lines AA, BB, and CC of Figure 1, respectively. The high-voltage divider resistor 10 mainly includes a substrate 100, a first input inner electrode 200, a first output inner electrode 210, several first series inner electrodes 220, 230, 240, and 250, a thick film resistor R1, several first thin film resistors R2 and R3, at least one second thin film resistor R4, a thin film capacitor C, a first insulating protective layer 300, several second inner electrodes 400, 410, 420, 430, 440, and 450, a second insulating protective layer 500, several outer electrodes OE1 to OE6, an antimagnetic isolation layer 600, and a third insulating protective layer 700.

[0027] The substrate 100 has a first surface 110 and a second surface 120 located on opposite sides of the substrate 100. The substrate 100 may be, for example, a cuboid or a cube. However, the substrate 100 may be a plate of other suitable shapes, which is not limited thereto. For example, the material of the substrate 100 may be alumina (Al₂O₃), aluminum nitride (AlN), boron nitride (BN), zirconia-toughened alumina (ZTA), silicon dioxide (SiO₂), or silicon carbide (SiC), etc.

[0028] Referring to Figure 15, both the first input internal electrode 200 and the first output internal electrode 210 are disposed on the first surface 110 of the substrate 100. The first input internal electrode 200 and the first output internal electrode 210 are located on opposite sides of the first surface 110, for example, on opposite edge regions of the first surface 110. The first series internal electrodes 220, 230, 240, and 250 are arranged separately on the first surface 110 along a direction D1 from the first input internal electrode 200 toward the first output internal electrode 210. The first series internal electrodes 220, 230, 240, and 250 are arranged sequentially. The first series internal electrode 250 may, for example, be adjacent to the first output internal electrode 210, but separate from it. For example, the distance D between the first series internal electrode 250 and the first output internal electrode 210 may be 0.1 mm to 0.5 mm. Within this range, the spacing D allows for an optimized spatial layout while effectively preventing the first series inner electrode 250 from being connected to the first output inner electrode 210.

[0029] In the embodiment shown in Figure 15, the first input internal electrode 200 is opposite to the first output internal electrode 210 and the first series internal electrode 250, and the extension length of the first input internal electrode 200 is greater than the sum of the extension lengths of the first output internal electrode 210 and the first series internal electrode 250. The number of the first series internal electrodes 220, 230, 240, and 250 is not limited to four, and can be increased according to the increase of the number of resistors to be connected in series in the high-voltage divider resistor 10.

[0030] Depending on the product design, the high-voltage divider resistor 10 may optionally include a third internal electrode 260. The third internal electrode 260 is also located on the first surface 110 and extends from the first input internal electrode 200 toward the first output internal electrode 210. The third internal electrode 260 is engaged with the first input internal electrode 200 and spaced apart from the first output internal electrode 210.

[0031] Please refer to Figures 6 and 10 simultaneously. The thick film resistor R1 is disposed across the first input inner electrode 200 and the first series inner electrode 220 adjacent to the first input inner electrode 200. The thick film resistor R1 extends from the first input inner electrode 200 through the first surface 110 to the first series inner electrode 220.

[0032] Referring simultaneously to Figures 6 and 15, the first thin-film resistors R2 and R3, and the second thin-film resistor R4 are sequentially disposed across the first series inner electrodes 220, 230, 240, and 250, and are separated from each other. Specifically, the first thin-film resistor R2 extends from the first series inner electrode 220 through the first surface 110 to the first series inner electrode 230; the first thin-film resistor R3 extends from the first series inner electrode 230 through the first surface 110 to the first series inner electrode 240; and the second thin-film resistor R4 extends from the first series inner electrode 240 through the first surface 110 to the first series inner electrode 250. The first thin-film resistor R2 shares the first series inner electrode 220 with the thick-film resistor R1 and shares the first series inner electrode 230 with the first thin-film resistor R3. The other side of the first thin-film resistor R3 shares the first series inner electrode 240 with the second thin-film resistor R4. Through the first series internal electrodes 220, 230, 240, and 250, the thick film resistor R1, the first thin film resistors R2 and R3, and the second thin film resistor R4 are connected in series.

[0033] The first thin-film resistors R2 and R3 are high-resistance thin-film resistors, and the second thin-film resistor R4 is a low-resistance thin-film resistor. Therefore, the resistance of each second thin-film resistor R4 is less than the resistance of each first thin-film resistor R2 and R3. As shown in Figure 15, there is a distance L1 between the first series inner electrodes 220 and 230 spanned by the first thin-film resistor R2 and between the first series inner electrodes 230 and 240 spanned by the first thin-film resistor R3. There is a distance L2 between the first series inner electrodes 240 and 250 spanned by the second thin-film resistor R4. In some embodiments, the resistance of the low-resistance second thin-film resistor R4 after coating is 25% to 50% of the resistance of each of the high-resistance first thin-film resistors R2 and R3 after coating, and the repairable resistance space of the second thin-film resistor R4 is also 2 to 4 times less than that of the first thin-film resistors R2 and R3. Therefore, the distance L1 is designed to be 2 to 4 times the distance L2.

[0034] Furthermore, the resistance of the thick-film resistor R1 is much smaller than the series resistance of the first thin-film resistors R2 and R3 and the second thin-film resistor R4. In some embodiments, the resistance of the thick-film resistor R1 is less than 0.5% of the series resistance of the first thin-film resistors R2 and R3 and the second thin-film resistor R4.

[0035] The first thin-film resistors R2 and R3, and the second thin-film resistor R4, each have several repair grooves TG. The spacing S between the repair grooves TG is the width of the resistor line after repair. In some embodiments, the spacing S between the repair grooves TG is between 10 μm and 30 μm. When the spacing S is less than 10 μm, if the voltage is too high, the resistor lines will become capacitors and trip, and the thermal effects during repair will overlap, affecting the stability of the resistor. If the spacing S is greater than 30 μm, the resistor line will be too wide, and the desired repair effect cannot be obtained.

[0036] Referring simultaneously to Figures 7 and 14, the thin-film capacitor C is disposed on the first surface 110 of the substrate 100. The thin-film capacitor C may be located on one side of the series-connected thick-film resistor R1, first thin-film resistors R2 and R3, and second thin-film resistor R4. The thin-film capacitor C is a low-capacitance capacitor. The thin-film capacitor C includes a first electrode C1 and a second electrode C2 separated by a distance. The first electrode C1 and the second electrode C2 are opposite to each other. The first electrode C1 is connected to the first input internal electrode 200, and the second electrode C2 is connected to the first output internal electrode 210, such that the thin-film capacitor C is connected in parallel with the thick-film resistors R1, first thin-film resistors R2 and R3, and second thin-film resistor R4. In some embodiments, the distance W2 between the first electrode C1 and the second electrode C2 is greater than 30 μm and less than 3000 μm. If the distance W2 is less than 30 μm, the high-voltage divider resistor 10 may have insufficient withstand voltage. If the distance W2 is greater than 3000 μm, the thin-film capacitor C may not have electrostatic protection capability.

[0037] In some embodiments, as shown in FIG14, the first electrode C1 includes a symmetrical tip C1t, and the second electrode C2 may include a symmetrical groove C2c. The symmetrical tip C1t faces the symmetrical groove C2c and can discharge toward the symmetrical groove C2c. Referring first to FIG22, in other embodiments, the first electrode C1 includes a symmetrical tip C1t, and the second electrode C2 includes a symmetrical tip C2t. The symmetrical tips C1t and C2t are opposite each other and can discharge toward each other. For example, the tip angle θ of the symmetrical tips C1t and C2t can be from 30 degrees to 90 degrees.

[0038] For example, the materials of the first thin-film resistors R2 and R3, the second thin-film resistor R4, and the thin-film capacitor C can be high-resistivity metals such as nickel-chromium alloy (NiCr), nickel-chromium-silicon alloy (NiCrSi), nickel-chromium-aluminum alloy (NiCrAl), nickel-chromium-aluminum-silicon alloy (NiCrAlSi), nickel-chromium-aluminum-yttrium alloy (NiCrAlY), nickel-chromium-tantalum-molybdenum alloy (NiCrTaMo), and tantalum nitride (TaN). However, the materials of the first thin-film resistors R2 and R3, the second thin-film resistor R4, and the thin-film capacitor C can be other suitable high-resistivity resistor materials, and this disclosure is not limited to these.

[0039] Referring to Figures 8 and 11, in an embodiment where the high-voltage divider resistor 10 includes a varistor R5, the varistor R5 is disposed across the third internal electrode 260 and the first output internal electrode 210. The varistor R5 extends from the third internal electrode 260 through the first surface 110 to the first output internal electrode 210. Therefore, the varistor R5 is connected in parallel with the thin-film capacitor C, and the series-connected thick-film resistors R1, R2 and R3, and R4. The resistance of the varistor R5 is at least 20 times the series resistance of the first and R3 and the second R4 to minimize current flow through it. Furthermore, the operating voltage (V 1mA) of the varistor R5 is at least 1.2 times the maximum operating voltage of the high-voltage divider resistor 10.

[0040] In some embodiments, as shown in Figures 6, 8, and 12, the high-voltage divider resistor 10 further includes two glass protective layers 800 and 810. The glass protective layer 800 covers the thick-film resistor R1, and the glass protective layer 810 covers the varistor R5 to protect the thick-film resistor R1 and the varistor R5 from damage by the liquid in the subsequent wet processing.

[0041] Referring simultaneously to Figures 6 to 8 and Figure 17, a first insulating protective layer 300 covers the first surface 110 of the substrate 100. The first insulating protective layer 300 exposes at least a portion of the first input internal electrode 200, a portion of the first output internal electrode 210, and the first series internal electrodes 240 and 250 spanned by the second thin-film resistor R4. In embodiments where the high-voltage divider resistor 10 includes multiple low-resistance thin-film resistors, these low-resistance thin-film resistors collectively span two or more series internal electrodes. The first insulating protective layer 300 exposes the first and last of the series internal electrodes spanned by these low-resistance thin-film resistors to facilitate voltage measurement. In embodiments where the high-voltage divider resistor 10 includes a single low-resistance thin-film resistor, namely the second thin-film resistor R4, the first series internal electrodes 240 and 250 are respectively the first and last series internal electrodes spanned by the second thin-film resistor R4.

[0042] In the embodiment shown in FIG17, the first insulating protective layer 300 exposes at least a portion of the first input internal electrode 200, comprising a first portion 202 and a second portion 204. The first portion 202 is opposite to the exposed portion of the first output internal electrode 210, and the second portion 204 is adjacent to the thick film resistor R1. For example, the material of the first insulating protective layer 300 may be silicon oxide, tantalum oxide, or silicon nitride.

[0043] Referring to Figures 6 to 8 and Figure 19, the second inner electrodes 400, 410, 420, 430, 440, and 450 are disposed on the first insulating protective layer 300. The second inner electrodes 400, 410, and 420 are arranged in one row, and the second inner electrodes 430, 440, and 450 are arranged in another row. The second inner electrodes 400, 410, and 420 are respectively disposed on the second portion 204 of the first input inner electrode 200 and the exposed portions of the first series inner electrodes 240 and 250. The second inner electrodes 430, 440, and 450 are respectively disposed on the first portion 202 of the first input inner electrode 200, the exposed portion of the first output inner electrode 210, and the first insulating protective layer 300 between the second inner electrodes 430 and 440.

[0044] Optionally, as shown in Figures 7 and 19, the high-voltage divider resistor 10 further includes an electromagnetic wave isolation layer 270. The electromagnetic wave isolation layer 270 is disposed on the first insulating protective layer 300 and is located between one row of second inner electrodes 400, 410, and 420 and another row of second inner electrodes 430, 440, and 450. Specifically, the electromagnetic wave isolation layer 270 extends between these two rows to isolate electromagnetic waves in the presence of additional electromagnetic waves or when the input / output voltage is too high.

[0045] In some embodiments, as shown in FIG6, the second internal electrodes 400, 410, 420, 430, 440, and 450 and the electromagnetic wave isolation layer 270 all include sequentially stacked titanium tungsten (TiW) layers TL and copper layers CL. The TiW layer TL is sandwiched between the first insulating protective layer 300 and the copper layer CL. The TiW layer TL is a bonding layer, which can improve the adhesion between the copper layer CL and the substrate 100 or the first insulating protective layer 300. For example, the thickness of the TiW layer TL can be 0.01 μm to 0.1 μm, and the thickness of the copper layer CL can be 0.5 μm to 5 μm. The thickness of the copper layer CL within this range can provide a certain thermal conductivity thickness. If the thickness of the copper layer CL exceeds 5 μm, the sputtering time of the copper layer CL will be too long, causing the underlying mask to overheat and solidify, making the mask impossible to remove.

[0046] As shown in Figure 19, in some embodiments, the distance G1 between the second inner electrodes 400, 410, 420, 430, 440, and 450 and their adjacent long sides from the substrate 100 is 50 μm to 250 μm, and the distance G4 between them and their adjacent short sides from the substrate 100 is 50 μm to 250 μm. The spacing G3 between adjacent electrodes in the same column of the second inner electrodes 400, 410, 420, 430, 440, and 450 is 200 μm to 2000 μm. The spacing G2 between each column of the second inner electrodes 400, 410, 420, 430, 440, and 450 and the electromagnetic wave isolation layer 270 is 200 μm to 2000 μm.

[0047] Referring to Figures 6 to 8 and Figure 20, the second insulating protective layer 500 covers the first surface 110 of the substrate 100 and the first insulating protective layer 300, but does not cover the junctions 402, 412, 422, 432, 442, and 452 of the second internal electrodes 400, 410, 420, 430, 440, and 450. The material of the second insulating protective layer 500 can be, for example, epoxy resin, resin, or epoxy resin containing inorganic fillers. The inorganic fillers can be, for example, alumina, aluminum nitride, or silicon oxide.

[0048] In some embodiments, the joints 402, 412, 422, 432, 442, and 452 in the same column of the second inner electrodes 400, 410, 420, 430, 440, and 450 are equally spaced. That is, the joints 402 and 412, 412 and 422, 432 and 452, and 452 and 442 all have the same distance B6. In some embodiments, the distance B1 between the joints 402, 412, 422, 432, 442, and 452 and their adjacent long sides from the substrate 100 is 0.05 mm to 1.0 mm, and the distance B4 between the joints 402, 412, 422, 432, 442, and 452 and their adjacent short sides from the substrate 100 is 0.05 mm to 1.0 mm. The width B2 of the joints 402, 412, 422, 432, 442, and 452 is 1 / 5 to 1 / 4 of the width W of the substrate 100, and the length B5 is 1 / 10 to 1 / 5 of the length L of the substrate 100. The spacing B3 between the two rows of joints 402, 412, 422, 432, 442, and 452 is 1 / 3 to 1 / 2 of the width W of the substrate 100.

[0049] As shown in Figure 6, an antimagnetic isolation layer 600 is disposed on the second surface 120 of the substrate 100. In some embodiments, the antimagnetic isolation layer 600 includes a titanium-tungsten layer 610 and a copper layer 620 stacked sequentially. The titanium-tungsten layer 610 is located between the substrate 100 and the copper layer 620. The titanium-tungsten layer 610 is a bonding layer, which can improve the bonding between the copper layer 620 and the substrate 100. For example, the thickness of the titanium-tungsten layer 610 can be from 0.01 μm to 0.1 μm, and the thickness of the copper layer 620 can be from 0.5 μm to 5 μm.

[0050] As shown in Figures 2 and 6, the third insulating protective layer 700 covers the antimagnetic isolation layer 600. The material of the third insulating protective layer 700 can be, for example, epoxy resin, resin, or epoxy resin containing inorganic fillers, etc. A marking point MP is provided on the third insulating protective layer 700 for identifying the orientation of the pin electrodes.

[0051] As shown in Figures 6 to 8 and Figure 21, external electrodes OE3, OE4, OE5, OE1, OE2, and OE6 are respectively disposed on junctions 402, 412, 422, 432, 442, and 452. In some embodiments, each external electrode OE1 to OE6 includes a first metal layer ML1, a second metal layer ML2, and a third metal layer ML3 stacked sequentially. For example, the first metal layer ML1 may be a copper layer, the second metal layer ML2 may be a nickel layer, and the third metal layer ML3 may be a tin layer. As shown in Figure 6, in some exemplary embodiments, the spacing G between the first metal layer ML1 and the second insulating protective layer 500 is 5 μm to 20 μm.

[0052] Please refer to Figures 9 to 21, which respectively illustrate schematic diagrams of a high-voltage divider resistor 10 according to one embodiment of the present disclosure at various manufacturing stages. When fabricating the high-voltage divider resistor 10 as shown in Figures 1 and 6 to 8, a substrate 100 may be provided first. Then, using methods such as printing and sintering, a first internal electrode layer is formed on the first surface 110 of the substrate 100. The first internal electrode layer includes a first input internal electrode 200, a first output internal electrode 210, and first series internal electrodes 220, 230, 240, and 250. As shown in Figure 9, the first internal electrode layer may optionally include a third internal electrode 260.

[0053] The materials of the first input internal electrode 200 and the first output internal electrode 210, the first series internal electrodes 220, 230, 240, and 250, and the third internal electrode 260 may be silver, copper, manganese copper (MnCu) alloy, copper nickel (CuNi) alloy, or a conductive electrode paste made of nickel metal and glass. In some embodiments, the sintering temperature of this conductive electrode paste is 750°C to 900°C to match the processing temperature of the subsequent resistive layer and glass protective structure.

[0054] Next, as shown in Figure 10, a thick-film resistor R1 is formed on the first input internal electrode 200 and the first series internal electrode 220 using, for example, printing and sintering methods. The material of the thick-film resistor R1 can be, for example, a conductive resistive paste containing conductive metals such as ruthenium oxide (RuO2), copper-nickel alloy, nickel, or platinum, and glass. The sintering temperature of this conductive resistive paste is equal to or less than the sintering temperature of the aforementioned conductive electrode paste. For example, the sintering temperature of the conductive resistive paste is 750°C to 850°C.

[0055] As shown in Figure 11, in an embodiment where the high-voltage divider resistor 10 includes a varistor R5, the varistor R5 can be formed on the third internal electrode 260 and the first output internal electrode 210 using, for example, printing and sintering methods. For example, the material of the varistor R5 can be a mixed resistive paste containing semiconductor materials such as zinc oxide (ZnO), titanium oxide (TiO2), manganese oxide (Mn3O4), or silicon carbide (SiC) and glass. The sintering temperature of the mixed resistive paste of the varistor R5 is equal to or lower than the sintering temperature of the aforementioned conductive electrode paste. The sintering temperature of this mixed resistive paste can be, for example, 750°C to 850°C.

[0056] Next, as shown in Figure 12, glass protective layers 800 and 810 can be formed on the thick-film resistor R1 and varistor R5 respectively using methods such as printing and sintering. Glass protective layer 800 completely covers the thick-film resistor R1 and also covers portions of the first input internal electrode 200 and the first series internal electrode 220 surrounding the thick-film resistor R1. Glass protective layer 810 completely covers the varistor R5 and also covers portions of the first output internal electrode 210 and the third internal electrode 260 surrounding the varistor R5. The sintering temperature of glass protective layers 800 and 810 is equal to or less than the sintering temperature of the thick-film resistor R1. For example, the sintering temperature of glass protective layers 800 and 810 can be between 400°C and 850°C.

[0057] Next, as shown in Figure 13, a patternable and removable mask layer M1 is formed using methods such as printing, lamination, coating, or photolithography. The mask layer M1 covers the first surface 110 of the substrate 100, a portion of the first input internal electrode 200, the first output internal electrode 210, and the first series internal electrodes 220, 230, 240, and 250, and completely covers the third internal electrode 260 and the glass protective layers 800 and 810. The areas not covered by the mask layer M1 are the areas where the first thin-film resistors R2 and R3, the second thin-film resistor R4, and the thin-film capacitor C are to be formed. The material of the mask layer M1 can be, for example, photoresist, a removable adhesive film, or a peelable ink.

[0058] Subsequently, a thin-film resistor alloy layer is sputtered onto the mask layer M1 and the area not covered by the mask layer M1 using, for example, sputtering. Next, as shown in FIG13, the mask layer M1 is removed using, for example, a stripping solution, to form the first thin-film resistors R2 and R3, the second thin-film resistor R4, and the thin-film capacitor C.

[0059] After removing the masking layer M1, resistance repair work can be selectively performed on the first thin-film resistors R2 and R3 and the second thin-film resistor R4 according to product requirements, in order to adjust the resistance values ​​of the first thin-film resistors R2 and R3 and the second thin-film resistor R4. As shown in Figure 15, the resistance repair work removes portions of the first thin-film resistors R2 and R3 and the second thin-film resistor R4, and several resistance repair grooves TG are formed in each of the first thin-film resistors R2 and R3 and the second thin-film resistor R4. For example, the resistance repair work can be performed using laser or physical processing methods.

[0060] Next, as shown in Figure 16, a patternable and removable mask layer M2 is formed using methods such as printing, lamination, coating, or photolithography. The mask layer M2 covers a portion of the first series internal electrodes 240 and 250, a portion of the first input internal electrode 200, and a portion of the first output internal electrode 210. The area not covered by the mask layer M2 is the area where the first insulating protective layer 300 is to be formed. The material of the mask layer M2 can be, for example, photoresist, a removable adhesive film, or a peelable ink.

[0061] Next, using methods such as sputtering or chemical vapor deposition, a first insulating protective layer 300 is formed to cover the mask layer M2 and the areas not covered by the mask layer M2. Subsequently, as shown in FIG17, the mask layer M2 is removed using, for example, a stripping solution to expose the first portion 202 and the second portion 204 of the first input internal electrode 200, the first series internal electrodes 240 and 250, and a portion of the first output internal electrode 210.

[0062] In some embodiments, a patternable and removable mask layer M3 can be formed using methods such as printing, lamination, coating, or photolithography. As shown in FIG18, the mask layer M3 covers the first insulating protective layer 300. The areas not covered by the mask layer M3 are the areas where the second internal electrodes 400, 410, 420, 430, 440, and 450 are to be formed. The material of the mask layer M3 can be, for example, photoresist, a removable adhesive film, or a peelable ink.

[0063] Next, a metal layer can be formed covering the mask layer M3 and the areas not covered by the mask layer M3 using, for example, sputtering. Additionally, as shown in FIG6, an antimagnetic isolation layer 600 can also be formed covering the second surface 120 of the substrate 100 using sputtering. Subsequently, as shown in FIG19, the mask layer M3 can be removed using a stripping solution to form the second inner electrodes 400, 410, 420, 430, 440, and 450, and the electromagnetic wave isolation layer 270. In some embodiments, when forming the metal layer and the antimagnetic isolation layer 600, a titanium-tungsten thin film and a copper film can be sputtered sequentially. Therefore, as shown in FIG6, the second inner electrodes 400, 410, 420, 430, 440, and 450, and the electromagnetic wave isolation layer 270 all include a titanium-tungsten layer TL and a copper layer CL, and the antimagnetic isolation layer 600 includes a titanium-tungsten layer 610 and a copper layer 620.

[0064] In other embodiments, the second internal electrodes 400, 410, 420, 430, 440, and 450 can be formed directly on the first insulating protective layer 300 and the areas not covered by the first insulating protective layer 300 by printing, and an antimagnetic isolation layer 600 can be formed on the second surface 120 of the substrate 100.

[0065] Next, a second insulating protective layer 500 can be applied to a portion of each of the second inner electrodes 400, 410, 420, 430, 440, and 450, and to the first insulating protective layer 300, using methods such as printing, lamination, coating, or photolithography. The second insulating protective layer 500 exposes the junctions 402, 412, 422, 432, 442, and 452 of the second inner electrodes 400, 410, 420, 430, 440, and 450, as shown in FIG20.

[0066] Next, a third insulating protective layer 700 can be formed to cover the antimagnetic isolation layer 600 and the second surface 120 of the substrate 100 using methods such as printing, lamination, coating, or photolithography. In addition, marking dots MP can be formed on the third insulating protective layer 700 using methods such as printing, lamination, coating, or photolithography.

[0067] Subsequently, as shown in Figure 21, a first metal layer ML1, a second metal layer ML2, and a third metal layer ML3 can be formed sequentially on the joints 402, 412, 422, 432, 442, and 452 using, for example, electroplating, to form external electrodes OE3, OE4, OE5, OE1, OE2, and OE6. At this point, the fabrication of the high-voltage divider resistor 10 is largely complete.

[0068] As can be seen from the above embodiments, the high-voltage divider resistor disclosed herein consists of a thick-film resistor, a high-resistance first thin-film resistor, and a low-resistance second thin-film resistor connected in series. Therefore, it can have the surge absorption capability of a thick-film resistor and the accuracy of a thin-film resistor, thereby improving the voltage division accuracy and stability of the high-voltage divider resistor.

[0069] Furthermore, the series-connected thick-film resistor, the first thin-film resistor, and the second thin-film resistor are connected in parallel to the ground electrode and the thin-film capacitor. An additional varistor can be connected in parallel to prevent damage from instantaneous high-voltage surges and static electricity. In addition, the antimagnetic isolation layer and the copper-plated layer of the second inner electrode can reduce the risk of electromagnetic interference and sulfidation environment.

[0070] Furthermore, since the thick-film resistor, the first thin-film resistor, and the second thin-film resistor are fabricated on the same chip, this high-voltage divider resistor reduces the accuracy differences in resistance value matching between individual chips compared to traditional circuit applications with multiple independent resistor chips in series. It also offers better measurement accuracy, better sampling accuracy for temperature resistance differences, and lower sampling noise. Moreover, because the circuit layout can be done with a single chip resistor, it effectively reduces layout space, significantly increasing the space utilization and cost advantages of the circuit board.

[0071] Although this disclosure has been shown above by way of embodiments, it is not intended to limit this disclosure. Anyone with ordinary knowledge in this art can make various modifications and refinements without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure shall be determined by the appended claims.

[0072] 10: High-voltage divider resistors 10a: Front 10b: Welding surface 100:Substrate 110: First Surface 120: Second Surface 200: First input internal electrode 202: Part One 204: Part Two 210: First output internal electrode 220: First series internal electrode 230: First series internal electrode 240: First series internal electrode 250: First series internal electrode 260: Third internal electrode 270: Electromagnetic wave isolation layer 300: First insulating protective layer 400: Second internal electrode 402: Joint 410: Second internal electrode 412: Joint 420: Second internal electrode 422: Joint 430: Second internal electrode 432: Joint 440: Second internal electrode 442: Joint 450: Second internal electrode 452: Joint 500: Second insulating protective layer 600: Antimagnetic isolation layer 610: Titanium-tungsten layer 620: Copper layer 700: Third insulating protective layer 800: Glass protective layer 810: Glass protective layer AA: Section line B1: Spacing B2: Width B3: Spacing B4: Spacing B5: Length B6: Spacing BB: Section line C: Thin film capacitor C1: First electrode C1t: Symmetrical apex C2: Second electrode C2c: Symmetrical groove portion C2t: Symmetrical apex CC: Section line CL: Copper layer D: Spacing D1: Direction G: Spacing G1: Distance G2: Spacing G3: Spacing G4: Distance EI: Input electrode EO1: Output electrode EO2: Output electrode L: Length L1: Distance L2: Distance M1: Cover Layer M2: Covering Layer M3: Cover Layer ML1: First metal layer ML2: Second metal layer ML3: Third metal layer MP: Marker Point OE1: External electrode OE2: External electrode OE3: External electrode OE4: External electrode OE5: External electrode OE6: External electrode R1: Thick film resistor R2: First thin-film resistor R3: First thin-film resistor R4: Second thin-film resistor R5: Varistor S: Spacing TG: Repair groove TL: Titanium-tungsten layer W: Width W2: Distance θ: Tip angle

Claims

1. A high-voltage divider resistor, comprising: a substrate having a first surface and a second surface opposite to each other; a first input internal electrode and a first output internal electrode respectively disposed on opposite sides of the first surface; a plurality of first series internal electrodes arranged separately on the first surface along the direction from the first input internal electrode toward the first output internal electrode; a thick film resistor disposed across an adjacent portion of the first input internal electrode and the first series internal electrodes; a plurality of first thin film resistors and at least one second thin film resistor sequentially disposed across the first series internal electrodes and spaced apart from each other, wherein the resistance value of each of the at least one second thin film resistor is less than the resistance value of each of the first thin film resistors, and the resistance value of the thick film resistor is less than 0.5% of the series resistance value of the at least one second thin film resistor and the first thin film resistors; a thin film capacitor disposed on the first surface and comprising a first electrode and a second electrode spaced apart, wherein the first electrode is connected to the first input internal electrode, and the second electrode is connected to the first output internal electrode; A first insulating protective layer covers the first surface and exposes at least a portion of the first input internal electrode, a portion of the first output internal electrode, and a first and a last of the first series internal electrodes spanned by the at least one second thin-film resistor; a plurality of second internal electrodes are disposed on the first insulating protective layer and respectively cover the portions of the first input internal electrode and the first output internal electrode, and the first and the last of the first series internal electrodes spanned by the at least one second thin-film resistor; a second insulating protective layer covers the first surface and the first insulating protective layer and exposes a junction of each of the second internal electrodes; a plurality of external electrodes are respectively disposed on the junctions; an antimagnetic isolation layer is disposed on the second surface; and a third insulating protective layer covers the antimagnetic isolation layer.

2. The high-voltage divider resistor as claimed in claim 1 further comprises: a third inner electrode disposed on the first surface and extending from the first input inner electrode toward the first output inner electrode and spaced apart from the first output inner electrode; and a varistor disposed across the third inner electrode and the first output inner electrode, wherein one of the varistors has a resistance of more than 20 times the series resistance, and one of the varistors has an operating voltage of more than 1.2 times the maximum operating voltage of one of the high-voltage divider resistors.

3. The high-voltage divider resistor as described in claim 2 further comprises two glass protective layers respectively covering the thick-film resistor and the varistor.

4. The high-voltage divider resistor as claimed in claim 1, wherein one of the distances between the first series inner electrodes across each of the first thin-film resistors is 2 to 4 times the distance between the first series inner electrodes across each of the at least one second thin-film resistor.

5. The high-voltage divider resistor as claimed in claim 1, wherein each of the first thin-film resistors and the at least one second thin-film resistor has a plurality of trimming grooves, and the spacing between one of the trimming grooves is between 10 μm and 30 μm.

6. The high-voltage divider resistor as claimed in claim 1, wherein the distance between the first electrode and the second electrode is greater than 30 μm and less than 3000 μm; and the first electrode, or each of the first electrode and the second electrode, includes a symmetrical tip, wherein one of the symmetrical tips has a tip angle of 30 degrees to 90 degrees.

7. The high-voltage divider resistor as claimed in claim 1, wherein the first insulating protective layer exposes at least a portion of the first input internal electrode comprising a first portion and a second portion, the first portion being opposite to the portion of the first output internal electrode, and the second portion being adjacent to the thick film resistor.

8. The high-voltage divider resistor as claimed in claim 7, wherein a first, a second, and a third of the second internal electrodes are respectively disposed on the second portion of the first input internal electrode and the first and last of the first series internal electrodes spanned by the at least one second thin-film resistor; a fourth, a fifth, and a sixth of the second internal electrodes are respectively disposed on the first insulating protective layer between the first portion of the first input internal electrode and the portion of the first output internal electrode, and between the fourth and the fifth; and the junctions of the second internal electrodes located among the first, second, and third electrodes, and the junctions located among the fourth, fifth, and sixth electrodes, are all equally spaced.

9. The high-voltage divider resistor as claimed in claim 8 further includes an electromagnetic wave isolation layer, wherein the electromagnetic wave isolation layer is disposed on the first insulating protective layer and is located between the first, second, and third, and the fourth, fifth, and sixth of the second inner electrodes.

10. The high-voltage divider resistor as claimed in claim 1 further includes a marking point, wherein the marking point is disposed on the third insulating protective layer.

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