Granular sputter source target with repeller cup and method for use thereof

Abstract

The disclosure is generally directed to an ion implantation system and an ion source material associated therewith. More particularly, the present disclosure is directed to components for ion implantation system using an aluminum-based solid source material to produce ions for electrically doping silicon, silicon carbide, or other semiconductor substrates(i.e.,wafer). The disclosed embodiments may be used at temperatures ranging up to

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