Semiconductor device
TW202642800APending Publication Date: 2026-10-16SK HYNIX INC
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Patent Information
- Application Number
- TW115100603
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-31
- Filing Date
- 2026-01-07
- Publication Date
- 2026-10-16
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Figure TWG2TA001080887_001 
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Abstract
According to embodiments of the present disclosure, a semiconductor device includes a first electrode and a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The dielectric layer includes a first ferroelectric layer; a second ferroelectric layer disposed between the first ferroelectric layer and the second electrode and having a domain different from a domain of the first ferroelectric layer; and a domain separation layer disposed between the first ferroelectric layer and the second ferroelectric layer and containing a first dopant and a metal element. The first dopant includes a metal cation having a valency different from a valency of the metal element.
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